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HF etchant solutions in supercritical carbon dioxide for "dry" etch processing of microelectronic devices
Journal article   Peer reviewed

HF etchant solutions in supercritical carbon dioxide for "dry" etch processing of microelectronic devices

Charles A. Jones, Dongxing Yang, Eugene A. Irene, Stephen M. Gross, Mark Wagner, James DeYoung and Joseph M. DeSimone
Chemistry of Materials, Vol.15(15), pp.2867-2869
15
07/29/2003
DOI: https://doi.org/10.1021/cm034235w

Abstract

Chemistry(all) Chemical Engineering(all) Materials Chemistry
A "dry" supercritical CO2-based etchant solution containing HF/pyridine as an anhydrous HF source effectively dissolves SiO2 thin films on silicon wafers. These dilute etchant solutions are active in removal of post-etch residues in back-end-of-line cleaning of microelectronic structures.

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